Magnetic memory device and method of fabricating the same

Details Magnetic memory device and method of fabricating the same Magnetic memory device and method of fabricating the same

2010-10-29

2011-10-25

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S421000, C257S427000, C360S324200, C365S158000

Reexamination Certificate

active

08043869

ABSTRACT:
A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device further includes a magnetic tunnel junction structure connected to the readout diode, first and second write-in conductors disposed at both sides of the magnetic tunnel junction structure and connected to the first and second write-in diodes, respectively and a first write-in line, a readout line and a second write-in line, which are connected to the first write-in conductor, the magnetic tunnel injection structure, and the second write-in conductor, respectively.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.

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