Magnetic memory device and method of fabricating the same

Details Magnetic memory device and method of fabricating the same Magnetic memory device and method of fabricating the same

2006-08-16

2010-06-08

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21665

Reexamination Certificate

active

07732222

ABSTRACT:
There is provided a magnetic memory device and a method of forming the same. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.

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