Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-06-14
2009-02-10
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S158000, C365S171000, C365S173000, C365S207000
Reexamination Certificate
active
07489577
ABSTRACT:
A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.
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Aoki Masaki
Sato Yoshihiro
Fujitsu Limited
Luu Pho M.
Westerman, Hattori, Daniels & Adrian , LLP.
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