Magnetic memory device and method for reading magnetic...

Details Magnetic memory device and method for reading magnetic... Magnetic memory device and method for reading magnetic...

2009-01-28

2010-11-23

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Hall effect

C365S009000, C365S158000, C365S171000

Reexamination Certificate

active

07839675

ABSTRACT:
A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect.

REFERENCES:
patent: 5652445 (1997-07-01), Johnson
patent: 2009/0154030 (2009-06-01), Yamada et al.
patent: 2010/0072993 (2010-03-01), Pan
patent: 2010/0097063 (2010-04-01), Ando et al.
Mark Johnson, et al., “Hybrid Hall effect device”, 1997, Appl. Phys. Lett. vol. 71, No. 7, pp. 974-976.

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