Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-08-22
2006-08-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000
Reexamination Certificate
active
07095650
ABSTRACT:
A magnetic memory device in which the memory cell of MRAM is reduced in size, and a method for producing the magnetic memory device are provided. The lower wiring is formed below the word line. The connecting hole and the plug connected to it are provided. The reading wiring and the lower layer wiring are connected through this plug. Alternatively, the local wiring is provided in the connecting hole and the reading wiring and the lower layer wiring are connected. In this way it is possible to form the connecting hole close to the word line, and hence it is possible to reduce the cell size in the direction along the bit line.
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patent: 6560135 (2003-05-01), Matsuoka et al.
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patent: 6653703 (2003-11-01), Hosotani et al.
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patent: 6831855 (2004-12-01), Kishi et al.
patent: 6909129 (2005-06-01), Kim et al.
Depke Robert J.
Phung Anh
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
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