Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2008-01-22
2008-01-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000
Reexamination Certificate
active
07321508
ABSTRACT:
A magnetic memory device in which the memory cell of MRAM is reduced in size, and a method for producing the magnetic memory device are provided. The lower wiring is formed below the word line. The connecting hole and the plug connected to it are provided. The reading wiring and the lower layer wiring are connected through this plug. Alternatively, the local wiring is provided in the connecting hole and the reading wiring and the lower layer wiring are connected. In this way it is possible to form the connecting hole close to the word line, and hence it is possible to reduce the cell size in the direction along the bit line.
REFERENCES:
patent: 5940319 (1999-08-01), Durlam et al.
patent: 5946227 (1999-08-01), Naji
patent: 6498747 (2002-12-01), Gogl et al.
patent: 6560135 (2003-05-01), Matsuoka et al.
patent: 6643168 (2003-11-01), Okazawa
patent: 6653703 (2003-11-01), Hosotani et al.
patent: 6717845 (2004-04-01), Saito et al.
patent: 6831855 (2004-12-01), Kishi et al.
patent: 6834008 (2004-12-01), Rinerson et al.
patent: 6909129 (2005-06-01), Kim et al.
J.M. Daughton, Magnetoresistive Memory Technology, Thin Solid Films 1992 216, pp. 162-168.
D.D. Tang et al., An IC Process Compatible Nonvolatile Magnetic RAM IEDM'95, pp. 997-999.
R.Meservey, Spin-Polarized Electron Tunneling Physics Reports 238 (4) (1994) pp. 214-217.
T. Miyazaki et al., Giant magnetic tunneling effcet in FE/AI2O3/Fe junction, J. Man. Magn Mater. 139 (1995) L231-L234.
R.Scheuerlein et al., A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell, ISSCC, 2000 pp. 128-129.
Depke Robert J.
Phung Anh
Rockey, Depke & Lyons LLC.
Sony Corporation
LandOfFree
Magnetic memory device and method for production thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic memory device and method for production thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory device and method for production thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2803771