Magnetic memory device and method for manufacturing the same

Details Magnetic memory device and method for manufacturing the same Magnetic memory device and method for manufacturing the same

2005-04-19

2005-04-19

Phan, Trong (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06882563

ABSTRACT:
A magnetic memory device includes a first memory portion, the first memory portion having a first wiring extending in a first direction, second wirings extending in a second direction, a first memory element portion in which magneto-resistance elements is connected in series and arranged at intersections between the first and second wirings, and a first switching element connected to one end of the first memory element portion, and a second memory portion which is adjacent to the first memory portion in the first direction and shares the first wiring with the first memory portion, the second memory portion having the first wiring, third wirings extending in the second direction, a second memory element portion in which the magneto-resistance elements are connected in series and arranged at intersections between the first and third wirings, and a second switching element connected to one end of the second memory element portion.

REFERENCES:
patent: 5627704 (1997-05-01), Lederman et al.
patent: 5734606 (1998-03-01), Tehrani et al.
patent: 5978257 (1999-11-01), Zhu et al.
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6590244 (2003-07-01), Asao et al.
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6683802 (2004-01-01), Katoh
patent: 6689622 (2004-02-01), Drewes
patent: 6709942 (2004-03-01), Pan et al.
patent: 6713802 (2004-03-01), Lee
patent: 1998-24995 (1998-07-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC 2000, Technical Digest, Session 7, pp. 128-129.

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