Magnetic memory device and method

Details Magnetic memory device and method Magnetic memory device and method

2005-02-01

2005-02-01

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000

Reexamination Certificate

active

06850433

ABSTRACT:
A magnetic memory device can include a synthetic ferrimagnetic data, a soft reference layer and a tunneling layer. The synthetic ferrimagnetic data layer has a magnetic moment directable to a first orientation and a second orientation. The soft reference layer has a lower coercivity than the synthetic ferrimagnetic data layer. The tunneling layer has electrical resistance qualities which are influenced by magnetic moment orientations of the synthetic ferrimagnetic data layer and the soft reference layer.

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