Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-07-05
2005-07-05
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S171000
Reexamination Certificate
active
06914810
ABSTRACT:
A magnetic memory device includes magneto resistive elements which are laminated in each cell with easy axes of magnetization set in different directions, each magneto resistive elements having at least two resistance values, and first and second wirings which sandwich the magneto resistive elements and are arranged to extend in different directions from each other.
REFERENCES:
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6404673 (2002-06-01), Matsui
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6538917 (2003-03-01), Tran et al.
patent: 6603677 (2003-08-01), Redon et al.
patent: 2001/0031374 (2001-10-01), Whang et al.
patent: 2002/0000597 (2002-01-01), Okazawa
patent: 2002/0055016 (2002-05-01), Hiramoto et al.
patent: 0 962 939 (1999-12-01), None
patent: 1 085 586 (2001-03-01), None
patent: 1 132 919 (2001-09-01), None
patent: 2001-217398 (2001-08-01), None
V.N. Samofalov, et al., Journal of Magnetism and Magnetic Materials, vol. 128, No. 3, pp. 354-360, “Features of Remagneization Processes in Stripes of Maltilayer Films With Crossed Easy Axes of Magnetization and Prospects of Their Applications”, Dec. 1, 1993.
Le Toan
Phung Anh
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