Magnetic memory device

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S189090, C365S189160

Reexamination Certificate

active

07839676

ABSTRACT:
A magnetic memory device includes a plurality of word lines, a plurality of bit lines arranged to intersect with the word lines, an MRAM cell array including a plurality of magnetic random access memory (MRAM) cells arranged at intersection portions between the word lines and the bit lines, a read current source which supplies a read current to the MRAM cells in a read mode, a sense amplifier which detects terminal voltages of the MRAM cells generated by the read current to generate a detection output signal, a latch circuit which latches the detection output signal to output read data, and a data write circuit which supplies a write current to the MRAM cells depending on write data in a write mode to perform writing and which supplies the write current to the MRAM cells depending on the read data in the read mode to perform rewriting.

REFERENCES:
patent: 6879513 (2005-04-01), Ooishi
patent: 7057925 (2006-06-01), Ooishi et al.
patent: 7313017 (2007-12-01), Ooishi et al.
patent: 7596014 (2009-09-01), Kawahara et al.
patent: 2007-134027 (2007-05-01), None
patent: 2008-310868 (2008-12-01), None

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