Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2009-03-19
2010-11-23
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S189090, C365S189160
Reexamination Certificate
active
07839676
ABSTRACT:
A magnetic memory device includes a plurality of word lines, a plurality of bit lines arranged to intersect with the word lines, an MRAM cell array including a plurality of magnetic random access memory (MRAM) cells arranged at intersection portions between the word lines and the bit lines, a read current source which supplies a read current to the MRAM cells in a read mode, a sense amplifier which detects terminal voltages of the MRAM cells generated by the read current to generate a detection output signal, a latch circuit which latches the detection output signal to output read data, and a data write circuit which supplies a write current to the MRAM cells depending on write data in a write mode to perform writing and which supplies the write current to the MRAM cells depending on the read data in the read mode to perform rewriting.
REFERENCES:
patent: 6879513 (2005-04-01), Ooishi
patent: 7057925 (2006-06-01), Ooishi et al.
patent: 7313017 (2007-12-01), Ooishi et al.
patent: 7596014 (2009-09-01), Kawahara et al.
patent: 2007-134027 (2007-05-01), None
patent: 2008-310868 (2008-12-01), None
Furuta Masanori
Kurose Daisuke
Sugawara Tsutomu
Auduong Gene N.
Kabushiki Kaisha Toshiba
Ohlandt Greeley Ruggiero & Perle L.L.P.
LandOfFree
Magnetic memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4238376