Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-06-18
2009-10-20
Pert, Evan (Department: 2826)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C257S421000
Reexamination Certificate
active
07606063
ABSTRACT:
A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.
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Chen Wei-Chuan
Shen Chih-Ta
Shen Kuei-Hung
Wang Yung-Hung
Yang Shan-yi
Apex Juris pllc
Heims Tracy M.
Industrial Technology Research Institute
Pert Evan
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