Magnetic memory device

Details Magnetic memory device Magnetic memory device

2008-06-20

2009-06-30

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C257S421000, C438S003000

Reexamination Certificate

active

07554837

ABSTRACT:
A width and a thickness of a bit line are represented as W1and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1and L2and the cross-sectional areas S1and S2are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.

REFERENCES:
patent: 5986858 (1999-11-01), Sato et al.
patent: 6797536 (2004-09-01), Yoda et al.
patent: 7031183 (2006-04-01), Kerszykowski et al.
patent: 7038939 (2006-05-01), Amano et al.
patent: 7064402 (2006-06-01), Kajiyama et al.
patent: 7403415 (2008-07-01), Okumura et al.
patent: 2003/0026127 (2003-02-01), Chen
patent: 2004/0021189 (2004-02-01), Yoda et al.
patent: 2005/0221511 (2005-10-01), Wang et al.
patent: 2006/0209591 (2006-09-01), Hong et al.
patent: 2002-231904 (2002-08-01), None
patent: 2003-86773 (2003-03-01), None
patent: 2004-296869 (2004-10-01), None
Park, J.H., et al. “An 8F2 MRAM Technology using Modified Metal Lines.” IEDM Tech. Dig., 2003, pp. 827-830.

Affiliated with

Also associated with

Rating

Magnetic memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4124432