Magnetic memory device

Details Magnetic memory device Magnetic memory device

2003-04-16

2009-02-03

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

07486548

ABSTRACT:
A memory cell for a magnetic memory device comprising a first hard magnetic later having a first fixed magnetization vector; a second hard magnetic later having a second fixed magnetization vector; a first soft magnetic layer having a first alterable magnetization vector and disposed adjacent to the first hard magnetic layer and a second soft magnetic layer having a second alterable magnetization vector and disposed adjacent to the second hard magnetic layer, the first and the second soft magnetic layers are magnetostatically coupled antiparallel to each other to form a flux-closed structure. An electrically conductive layer is disposed between the two soft magnetic layers for passing an electric current therethrough to perform the read and write operations. A magnetic memory device made thereof possesses a higher thermal stability against external thermal fluctuations and in the meantime has a lower power dissipation in writing operations.

REFERENCES:
patent: 5930164 (1999-07-01), Zhu
patent: 5966323 (1999-10-01), Chen et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6473328 (2002-10-01), Mercaldi
patent: 6765823 (2004-07-01), Zhu et al.
patent: 01/71735 (2001-09-01), None
Austrian Patent Office Examination Report mailed Dec. 22, 2006 for corresponding Singapore Patent Application 200506516-4.

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