Magnetic memory device

Details Magnetic memory device Magnetic memory device

2004-11-30

2008-08-19

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S055000, C365S066000, C365S207000, C365S209000, C365S158000, C365S226000, C327S055000, C327S057000

Reexamination Certificate

active

07414908

ABSTRACT:
A Magnetic Random Access Memory (MRAM), in which very little current flows through MTJ elements and very little voltage is applied across them, the MRAM being provided with sense-amplifiers capable of amplifying the potential difference between their corresponding pairs of bit lines at high speed. This is accomplished by a sense amplifier including CMOS inverters cross-connected or connected in loop, a P-channel MOS transistor for shutting the power off during standby, and N-channel MOS transistors for initializing the output of the sense amplifier during standby. A ground terminal of the inverter is connected to a bit line through a transistor of a bit switch, and a ground terminal of the inverter is connected to a bit line through a transistor of a bit switch.

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