Magnetic memory device

Details Magnetic memory device Magnetic memory device

2011-03-08

2011-03-08

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S230060

Reexamination Certificate

active

07903455

ABSTRACT:
A magnetic memory device including a plurality of word lines, a plurality of bit lines which intersect the word lines and are put into groups, a plurality of memory cells which are arranged at intersections between the bit lines and the word lines, each memory cell including a magnetic element and a transistor which are connected in series, a first decoder which sequentially selects the word lines, a second decoder which sequentially drives the bit lines of each group, a weighting adder which performs weighting addition of currents flowing on bit lines in a selected group to generate an added current signal, a current/voltage converter which converts the added current signal into a voltage signal, and an analog-to-digital converter which digitizes the voltage signal.

REFERENCES:
patent: 2005/0232006 (2005-10-01), Iwata
patent: 2004-158162 (2004-06-01), None
Ueda et al.; “Design of Low Read Bias Voltage and High Speed Sense Amplifier for STT-MRAM”, Technical Report of IEICE, ICD, pp. 1-6, Apr. 2007, with English Abstract.
Furuta et al., U.S. Appl. No. 12/343,353, filed Dec. 23, 2008, entitled “Magnetic Storage Device”.
Ueda et al.; “Design of Low Read Bias Voltage and High Speed Sense Amplifier for STT-MRAM”, Technical Report of IEICE, ICD, pp. 1-6, Abstract.
Sugimoto et al.; “A Low-Voltage, High-Speed and Low-Power Full Current-Mode Video-Rate CMOS A/D Converter”; Proc. of Eur. Solid State Circuits Conf., pp. 392-395, (1997).

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