Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-01-24
2006-01-24
Ngô, Ngân V. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S232000, C257S295000
Reexamination Certificate
active
06990012
ABSTRACT:
The present invention provides a magnetic memory. In one embodiment, the magnetic memory includes a first line having a first cross-sectional area. A second line is provided having a second cross-sectional area different from the first cross-sectional area. A magnetic memory cell stack is positioned between the first line and the second line.
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Perner Frederick A.
Smith Kenneth Kay
Hewlett--Packard Development Company, L.P.
Ngo Ngan V.
Nguyen Thinh T
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