Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-09-05
2006-09-05
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000
Reexamination Certificate
active
07102921
ABSTRACT:
The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.
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Anthony Thomas C.
Lee Heon
Perner Frederick A.
Walmsley Robert G
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