Magnetic memory device

Details Magnetic memory device Magnetic memory device

2008-04-01

2008-04-01

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000

Reexamination Certificate

active

07352615

ABSTRACT:
A magnetic memory device which can be formed with a further reduced size. The magnetic memory device includes: a plurality of memory cells each including at least one magnetoresistive effect revealing body and arranged along a pair of lines; a plurality of auxiliary write lines arranged so that each memory cell is provided with one auxiliary write line, each auxiliary write line being connected to the pair of lines, for introducing write currents flowing through the pair of lines to the vicinity of the magnetoresistive effect revealing body; and transistors arranged so that one transistor is inserted in each auxiliary write line, for allowing the write current to flow bidirectionally through the auxiliary write line in an operating state of the transistors.

REFERENCES:
patent: 2004/0114443 (2004-06-01), Ezaki et al.
patent: 2005/0112805 (2005-05-01), Goto et al.
patent: 2004-178623 (2004-06-01), None
English Language Abstract of JP 2004-178623.
U.S. Appl. No. 10/548,830 to Joichiro Ezaki et al., filed Sep. 13, 2005.
U.S. Appl. No. 10/568,808 to Susumu Haratani et al., filed Feb. 21, 2006.

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