Magnetic memory device

Details Magnetic memory device Magnetic memory device

2005-08-09

2005-08-09

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S204000, C365S232000, C327S309000, C327S314000

Reexamination Certificate

active

06927996

ABSTRACT:
A magnetic random access memory (MRAM) includes an array of magnetic memory cells arranged on a cross-point grid. Spurious voltages that build up on the stray wiring capacitance of unselected bit and word select lines are limited and discharged by diodes. The control of such spurious voltages improves device operating margins and allows the construction of larger arrays.

REFERENCES:
patent: 3751681 (1973-08-01), Jordan, Jr.
patent: 2005/0042825 (2005-02-01), Kitamura et al.

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