Magnetic memory device

Details Magnetic memory device Magnetic memory device

2005-05-17

2005-05-17

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S230060

Reexamination Certificate

active

06894923

ABSTRACT:
A magnetic memory device includes first to n-th MTJ devices recording data and first to n-th transistors connected to the first to n-th MTJ devices, respectively. The word line generates a magnetic field to be applied to the first to n-th MTJ devices during a write operation. A read word line is connected to gates of the first to n-th transistors and applies a voltage for turning on the first to n-th transistors during a read operation. A first word line driver is connected to a first end or a second end of the write word line and drives the write word line. A second word line driver is connected to a first end of the read word line and drives the read word line. A second switching circuit selectively connects the second end of the read word line and the second end of the write word line.

REFERENCES:
patent: 5701276 (1997-12-01), Bellini
patent: 20040037112 (2004-02-01), Ooishi
patent: 20040042292 (2004-03-01), Sakata et al.
patent: 20040047179 (2004-03-01), Tanizaki et al.
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell” IEEE International Solid State Circuits Conference(ISSCC) Digest of Technical Papers, pp. 128-129, Feb. 8, 2000.
M. Durlam, et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, IEEE International Solid-State Circuits Conference, (ISSCC) Digest of Technical Papers, pp. 130-131, Feb. 8, 2000.
Peter K. Naji, et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, IEEE International Solid-State Circuits Conference (ISSCC) Digest of Technical Papers, pp. 122-123, Feb. 6, 2001.

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