Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-01-04
2005-01-04
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S097000, C365S213000
Reexamination Certificate
active
06839271
ABSTRACT:
A magnetic memory device which comprises a magnetic memory cell that includes a magnetic material switchable between two resistive states on the application of a magnetic field. The device also comprises a wire that is connected to the magnetic memory cell and has a conductive connecting link and a conductive word or bit line which are electrically connected to each other. The connecting link is disposed between the word or bit line and the magnetic memory cell and has a thermal resistance that is larger than that of the word or bit line so as to provide a barrier for heat conduction from the magnetic memory cell to the word or bit line.
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Anthony Thomas C.
Lee Heon
Perner Frederick A.
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