Magnetic memory device

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S097000, C365S213000

Reexamination Certificate

active

06839271

ABSTRACT:
A magnetic memory device which comprises a magnetic memory cell that includes a magnetic material switchable between two resistive states on the application of a magnetic field. The device also comprises a wire that is connected to the magnetic memory cell and has a conductive connecting link and a conductive word or bit line which are electrically connected to each other. The connecting link is disposed between the word or bit line and the magnetic memory cell and has a thermal resistance that is larger than that of the word or bit line so as to provide a barrier for heat conduction from the magnetic memory cell to the word or bit line.

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Hewlett-Packard published application No. 20020089874, serial 758757, filed Jan. 11, 2001, Thermally-assisted switching of magnetic memory elements, Nikel, et al.
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