Magnetic memory cell with plural read transistors

Details Magnetic memory cell with plural read transistors Magnetic memory cell with plural read transistors

2006-03-14

2006-03-14

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S050000, C365S173000

Reexamination Certificate

active

07012832

ABSTRACT:
A magnetic random access memory (MRAM) device has increased ΔR/R for sensing a state of a pin-dependent tunneling (SDT) device. The MRAM device includes plural transistors connected to a read line for sensing the state of the SDT device. Plural transistors lower an underlying resistance during reading, increasing ΔR/R. The plural transistors can share a source region.

REFERENCES:
patent: 5930164 (1999-07-01), Zhu
patent: 6717844 (2004-04-01), Ohtani
patent: 6747301 (2004-06-01), Hiner et al.
patent: 6775183 (2004-08-01), Heide
patent: 2004/0066668 (2004-04-01), Gider et al.
patent: 2005/0002229 (2005-01-01), Matsutera et al.

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