Magnetic memory cell with increased GMR ratio

Details Magnetic memory cell with increased GMR ratio Magnetic memory cell with increased GMR ratio

1997-05-22

1999-04-27

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365173, G11C 1115

Patent

active

058986120

ABSTRACT:
First and second layers of magnetic material are stacked in parallel, overlying relationship and separated by a first layer of non-magnetic material sandwiched therebetween to form a magnetic memory cell. A layer of oxide (e.g. NiO) is positioned on either one or both major surfaces of the magnetic memory cell. The oxide has a thickness (e.g. less than approximately 150 .ANG.) which prevents the layer of oxide from pinning the first and second layers of magnetic material and adapts the layer of oxide to the first and second layers of magnetic material so as to increase the GMR ratio of the magnetic memory cell.

REFERENCES:
patent: 5459687 (1995-10-01), Sakakima et al.
patent: 5636159 (1997-06-01), Pohm
patent: 5659499 (1997-08-01), Chen et al.

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