Magnetic memory cell structure with thermal assistant and...

Details Magnetic memory cell structure with thermal assistant and... Magnetic memory cell structure with thermal assistant and...

2008-08-11

2010-12-14

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07852664

ABSTRACT:
A magnetic memory cell structure with thermal assistant includes a magnetic pinned layer, a barrier layer, a magnetic free layer, a perpendicular magnetic layer, and a heating layer sequentially stacked. The magnetic free layer has a longitudinal magnetization. The perpendicular magnetic layer has a perpendicular magnetization at a first temperature and is perpendicularly coupling to the longitudinal magnetization of the magnetic free layer. The perpendicular magnetic layer is in a paramagnetic state at a second temperature. The present invention further includes magnetic dynamic random access memory.

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patent: 2005/0281081 (2005-12-01), Fullerton et al.
patent: 2007/0189064 (2007-08-01), Min et al.

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