Magnetic memory cell structure

Details Magnetic memory cell structure Magnetic memory cell structure

2005-08-02

2005-08-02

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000

Reexamination Certificate

active

06925003

ABSTRACT:
The invention includes a magnetic memory cell. The magnetic memory cell includes a reference layer having a preset magnetization. A barrier layer is formed adjacent to the reference layer. A sense layer is formed adjacent to the barrier layer. A first conductive write line is electrically connected to the reference layer. The magnetic memory cell further includes a second conductive write line having a gap, the gap being filled by at least a portion of the sense layer. A write current conducting through the second conductive write line is at least partially conducted through the portion of the sense layer, the write current increasing a temperature of the sense layer.

REFERENCES:
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6611453 (2003-08-01), Ning
patent: 6807086 (2004-10-01), Kajiyama

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