Magnetic memory cell, magnetic random access memory, and...

Details Magnetic memory cell, magnetic random access memory, and... Magnetic memory cell, magnetic random access memory, and...

2011-04-19

2011-04-19

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S189140, C257S421000

Reexamination Certificate

active

07929342

ABSTRACT:
The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell1has a magnetic recording layer10and a pinned layer30connected to the magnetic recording layer10through a non-magnetic layer20. The magnetic recording layer10includes a magnetization switching region13, a first magnetization fixed region11and a second magnetization fixed region12. The magnetization switching region13has reversible magnetization and faces the pinned layer30. The first magnetization fixed region11is connected to a first boundary B1of the magnetization switching region13and its magnetization direction is fixed to a first direction. The second magnetization fixed region12is connected to a second boundary B2of the magnetization switching region13and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region13or away from the magnetization switching region13.

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