Magnetic memory cell having an annular data layer and a soft...

Details Magnetic memory cell having an annular data layer and a soft... Magnetic memory cell having an annular data layer and a soft...

2005-06-07

2005-06-07

Sarkar, Asok Kumar (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C365S158000, C365S171000, C365S173000, C428S692100, C438S003000

Reexamination Certificate

active

06903403

ABSTRACT:
An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memory array includes a ferromagnetic annular data layer having an opening, the opening enabling the second conductor to electrically contact the first conductor, an intermediate layer on at least a portion of the annular data layer, and a soft reference layer on at least a portion of the intermediate layer.

REFERENCES:
patent: 5389566 (1995-02-01), Lage
patent: 5477482 (1995-12-01), Prinz
patent: 5541868 (1996-07-01), Prinz
patent: 5661062 (1997-08-01), Prinz
patent: 6436526 (2002-08-01), Odagawa et al.

Affiliated with

Also associated with

Rating

Magnetic memory cell having an annular data layer and a soft... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory cell having an annular data layer and a soft..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory cell having an annular data layer and a soft... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3502027