Magnetic memory cell based on a magnetic tunnel junction...

Details Magnetic memory cell based on a magnetic tunnel junction... Magnetic memory cell based on a magnetic tunnel junction...

2011-05-17

2011-05-17

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

07944737

ABSTRACT:
Embodiments of the invention magnetic memory device, comprising: a magnetic tunnel junction (MTJ) which includes a first free layer optimized for reading; and a second free layer separate from the MTJ and optimized for writing.

REFERENCES:
patent: 7486545 (2009-02-01), Min et al.
patent: 2005/0068683 (2005-03-01), Gill
patent: 2005/0243479 (2005-11-01), Gill
patent: 2006/0245242 (2006-11-01), Rizzo et al.
patent: 2007/0243638 (2007-10-01), Horng et al.

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