Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-10-16
2007-10-16
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S055000
Reexamination Certificate
active
10809134
ABSTRACT:
An MRAM device is provided which includes an array of magnetic elements, a plurality of conductive lines configured to set magnetization states of the magnetic elements and circuitry configured to vary current applications along one or more of the conductive lines. In some cases, the MRAM device may additionally or alternatively include circuitry which is configured to terminate an application of current along one or more of the conductive lines before magnetization states of one or more magnetic elements selected for a write operation of the device are changed. In either case, a device is provided which includes an MRAM array and a first storage circuit comprising one or more magnetic elements, wherein the first storage circuit is configured to store parameter settings characterizing operations of the magnetic random access memory array within the magnetic elements. Methods for operating the devices provided herein are contemplated as well.
REFERENCES:
patent: 5914895 (1999-06-01), Jenne
patent: 5986932 (1999-11-01), Ratnakumar et al.
patent: 6172907 (2001-01-01), Jenne
patent: 6418046 (2002-07-01), Naji
patent: 6611454 (2003-08-01), Hidaka
patent: 6683806 (2004-01-01), Drewes
patent: 6683815 (2004-01-01), Chen et al.
patent: 6778430 (2004-08-01), Hidaka
patent: 6798691 (2004-09-01), Ounadjela et al.
patent: 6888742 (2005-05-01), Nguyen et al.
patent: 6947315 (2005-09-01), Iwata
patent: 6999339 (2006-02-01), Tuttle et al.
patent: 2004/0012994 (2004-01-01), Slaughter et al.
patent: 2004/0114443 (2004-06-01), Ezaki et al.
patent: 2004/0141368 (2004-07-01), Inaba
patent: 2004/0233755 (2004-11-01), Bessho et al.
Chen Eugene Y.
Jenne Fredrick B.
Mnich Thomas M.
Stevenson William L.
Daffer Kevin L.
Daffer McDaniel LLP
Hoang Huan
Lettang Mollie E.
Silicon Magnetic Systems
LandOfFree
Magnetic memory array architecture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic memory array architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory array architecture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3879053