Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-12-25
2007-12-25
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S066000, C365S158000, C365S171000, C365S173000, C365S207000, C365S209000, C365S214000
Reexamination Certificate
active
11288494
ABSTRACT:
A magnetic memory is disclosed. In one embodiment, the magnetic memory array includes a plurality of cell columns and a pair of reference cell columns, including a first reference cell column and a second reference cell column. A comparator is provided with a first and a second input terminal. A switching circuit is configured to connect each of the cell columns to the first input terminal and the pair of reference cell columns coupled in parallel to the second input terminal, and configured to connect the first reference cell column to the first input terminal and the second reference cell column to the second input terminal.
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patent: 2002/0172073 (2002-11-01), Hidaka
Braun Daniel
Gogl Dietmar
Altis Semiconductor SNC
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Pham Ly Duy
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