Magnetic memory, and method for writing the same

Details Magnetic memory, and method for writing the same Magnetic memory, and method for writing the same

2006-01-24

2006-01-24

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

06990013

ABSTRACT:
A magnetic memory includes: a spin polarization unit configured to spin-polarize electrons constituting a write current; a hot electron generation unit configured to convert electrons constituting the write current into hot electrons; and a magnetic layer which is subjected to magnetization reversal by the write current that has been spin-polarized by the spin polarization unit and converted into hot electrons by the hot electron generation unit.

REFERENCES:
patent: 5699374 (1997-12-01), Ichimura et al.
patent: 5898720 (1999-04-01), Yamamoto et al.
patent: 6480412 (2002-11-01), Bessho et al.
patent: 6741496 (2004-05-01), Hannah et al.
J.C. Slonczewski, “Current Driven Excitation of Magnetic Multilayers”, Journal of Magnetism and Magnetic Materials, 159, L-1-L-7, (Jun. 1996).
E.B. Myers et al., “Current-Induced Switching of Domains in Magnetic Multilayer Devices”, Science, vol. 285, pp. 867-870, (Aug. 1999).

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