Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-08-13
2009-11-03
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C365S066000
Reexamination Certificate
active
07613034
ABSTRACT:
A magnetic memory is provided in which the margin between a write current and a read current can be reduced. A magnetic storage element includes: a first magnetic layer in which the direction of magnetization can be reversed; a second magnetic layer in which the direction of magnetization is fixed; and a non-magnetic layer which is interposed between the first and second magnetic layers. The write current and the read current are supplied to the magnetic storage element in the stacking direction thereof through a read-write line. Moreover, a bias line which can apply a bias magnetic field to the first magnetic layer during a reading operation is disposed in the vicinity of the magnetic storage element.
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Hosobuchi Toshikazu
Tagami Katsumichi
Nguyen Viet Q
Porzio, Bromberg & Newman P.C.
TDK Corporation
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