Magnetic memory and driving method therefor

Details Magnetic memory and driving method therefor Magnetic memory and driving method therefor

2005-08-16

2005-08-16

Mai, Son L. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S100000, C365S171000

Reexamination Certificate

active

06930912

ABSTRACT:
A magnetic memory includes a plurality of variable resistors arrayed as memory elements in a matrix, a plurality of bit lines each of which is arranged on each row of the matrix and connected to one terminal of each variable resistor belonging to the same row, a read circuit which detects the resistance values of the variable resistors based on currents flowing through the bit lines, and load elements connected to the bit lines independently of and in parallel with the memory elements.

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patent: 6587370 (2003-07-01), Hirai
patent: 6614682 (2003-09-01), Hirai
Magneto-Resistive IC Memory Limitations and Architecture Implications, Roy E. Scheu riein (pp. 47 to 50), 1998 Int'l. Nonvolatile Memory Technology Conference.
Spin-Valve-Like Ferromagnetic Tunnel Junction, Kazuo Kobayashi, et al. (pp. 11 to 17) (with English translation), Nov. 5, 1999.

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