Magnetic memory

Details Magnetic memory Magnetic memory

2009-02-10

2011-12-13

Nguyen, Dang (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C257S379000, C257S536000

Reexamination Certificate

active

08077509

ABSTRACT:
A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.

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