Magnetic memory

Details Magnetic memory Magnetic memory

2007-05-23

2008-12-30

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S048000, C365S050000, C365S066000, C365S117000, C365S130000, C365S145000, C365S171000, C365S173000, C257SE21665, C257SE21663

Reexamination Certificate

active

07471551

ABSTRACT:
The direction of magnetization of a reading ferromagnetic material5Rforming a spin filter when reading is the same as that of a pinned layer1. In this case, a torque that works on the spin of a free layer3due to a spin polarized current becomes “zero.” When the element size is made small so as to improve the integration degree of the magnetic memory, according to the scaling law, the writing current can be made small. In the present invention, the resistance to the spin injection magnetization reversal due to a reading current is high, so that the magnitude of the writing current can be lowered.

REFERENCES:
JP2006-156477, Hugo Yutaka, “Memory Element, and Memory,” Jun. 15, 2006, all pages.
Berger, Luc, “Spin-Wave Emitting Diodes and Spin Diffusion in Magnetic Multilayers,” IEEE Transactions on Magnetics, vol. 34, No. 6, pp. 3837-3841 (Nov. 1998).
Slonczewski, J.C., “Current-Driven Excitation of Magnetic Multilayers,” Journal of Magnetism and Magnetic Materials, vol. 159, pp. L1-L7 (1996).
Johnson, Mark, “Bipolar Spin Switch,” Science, vol. 260, pp. 320-323 (Apr. 1993).

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