Magnetic memory

Details Magnetic memory Magnetic memory

2006-05-04

2008-11-18

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S157000

Reexamination Certificate

active

07453721

ABSTRACT:
A magnetic memory1having a wire5extended in a direction of arbitrary decision, an electro-resistivity effect element4disposed adjacently to the wire5, and a counterelement side yoke20B disposed adjacently on the side opposite the magneto-resistivity effect element4in the wire5and having the thickness of the counterelement side yoke20B so set as to be larger than 50 nm and smaller than 150 nm. Owing to conformity with this invention, this magnetic memory is enabled to homogenize the magnetization property during the course of writing operation and perform the writing work with a low electric current.

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Tehrani et al., Nikkei Electronics, Nov. 18, 2002, pp. 127-138 (partial English translation thereof).
Durlam et al., A 1-Mbit MRAM Based on 1T1MTJ Bit Cell Integrated with Copper Interconnect, IEEE J. Solid-State Circuit, vol. 38, 769-773 (2003).

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