Magnetic memory

Details Magnetic memory Magnetic memory

2008-04-29

2008-04-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C257S421000

Reexamination Certificate

active

11330196

ABSTRACT:
A TMR element has a free first magnetic layer, a second magnetic layer with a magnetization direction B fixed, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided above a surface of the first magnetic layer and having a fixed magnetization direction, and a first nonmagnetic conductive layer provided between the first magnetic layer and the third magnetic layer, and an area of a cross section of the first magnetic layer perpendicular to a stack direction is not less than 0.001 μm2, and less than 0.02 μm2.

REFERENCES:
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5738938 (1998-04-01), Kawano et al.
patent: 5768181 (1998-06-01), Zhu et al.
patent: 6125019 (2000-09-01), Hoshiya et al.
patent: 6347049 (2002-02-01), Childress et al.
patent: 6404673 (2002-06-01), Matsui
patent: 6469926 (2002-10-01), Chen
patent: 6628542 (2003-09-01), Hayashi et al.
patent: 6667901 (2003-12-01), Perner et al.
patent: 6714444 (2004-03-01), Huai et al.
patent: 6754100 (2004-06-01), Hayakawa
patent: 6934133 (2005-08-01), Hayakawa et al.
patent: 6956766 (2005-10-01), Nakamura et al.
patent: 6972992 (2005-12-01), Fukuzumi et al.
patent: 7023723 (2006-04-01), Daughton et al.
patent: 2006/0203538 (2006-09-01), Koga
patent: A 11-120758 (1999-04-01), None
patent: A 2003-204095 (2003-07-01), None
patent: A 2004-153182 (2004-05-01), None
Sun, et al., “Spin-Torque Transfer in Batch-Fabricated Spin-Valve Magnetic Nanojunctions (Invited),” Journal of Applied Physics, vol. 93, No. 10, pp. 6859-6863, May 15, 2003.
Mizukami, et al., “Spin Pumping in Ferromagnetic-Metal/Normal-Metal Junctions,” Journal of the Magnetic Society of Japan, vol. 27, No. 9, pp. 934-939, 2003.

Affiliated with

Also associated with

Rating

Magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3920671