Magnetic memory

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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Details

C365S171000, C365S173000, C257S421000

Reexamination Certificate

active

11330196

ABSTRACT:
A TMR element has a free first magnetic layer, a second magnetic layer with a magnetization direction B fixed, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided above a surface of the first magnetic layer and having a fixed magnetization direction, and a first nonmagnetic conductive layer provided between the first magnetic layer and the third magnetic layer, and an area of a cross section of the first magnetic layer perpendicular to a stack direction is not less than 0.001 μm2, and less than 0.02 μm2.

REFERENCES:
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5738938 (1998-04-01), Kawano et al.
patent: 5768181 (1998-06-01), Zhu et al.
patent: 6125019 (2000-09-01), Hoshiya et al.
patent: 6347049 (2002-02-01), Childress et al.
patent: 6404673 (2002-06-01), Matsui
patent: 6469926 (2002-10-01), Chen
patent: 6628542 (2003-09-01), Hayashi et al.
patent: 6667901 (2003-12-01), Perner et al.
patent: 6714444 (2004-03-01), Huai et al.
patent: 6754100 (2004-06-01), Hayakawa
patent: 6934133 (2005-08-01), Hayakawa et al.
patent: 6956766 (2005-10-01), Nakamura et al.
patent: 6972992 (2005-12-01), Fukuzumi et al.
patent: 7023723 (2006-04-01), Daughton et al.
patent: 2006/0203538 (2006-09-01), Koga
patent: A 11-120758 (1999-04-01), None
patent: A 2003-204095 (2003-07-01), None
patent: A 2004-153182 (2004-05-01), None
Sun, et al., “Spin-Torque Transfer in Batch-Fabricated Spin-Valve Magnetic Nanojunctions (Invited),” Journal of Applied Physics, vol. 93, No. 10, pp. 6859-6863, May 15, 2003.
Mizukami, et al., “Spin Pumping in Ferromagnetic-Metal/Normal-Metal Junctions,” Journal of the Magnetic Society of Japan, vol. 27, No. 9, pp. 934-939, 2003.

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