Magnetic memory

Details Magnetic memory Magnetic memory

2007-09-11

2007-09-11

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S131000, C365S133000, C365S066000

Reexamination Certificate

active

11549247

ABSTRACT:
A magnetic memory has a first, a second and a third magnetic transistor. The first magnetic transistor has a first magnetic section and a second magnetic section, wherein the first magnetic section couples to a high voltage end. The second magnetic transistor has a third magnetic section and a fourth magnetic section, wherein the third magnetic section couples to a low voltage end, and the fourth magnetic section couples to the second magnetic section of the first magnetic transistor. The third magnetic transistor has a fifth magnetic section and a sixth magnetic section, wherein the fifth magnetic section couples with the second magnetic section and the fourth magnetic section together, and the sixth magnetic section couples to an input/output end.

REFERENCES:
patent: 5565695 (1996-10-01), Johnson
patent: 6130814 (2000-10-01), Sun
patent: 2006/0054931 (2006-03-01), Huang et al.
patent: 2007/0085569 (2007-04-01), Agan et al.
patent: 2007/0086104 (2007-04-01), Agan et al.
patent: 2007/0097588 (2007-05-01), Agan et al.
patent: 2007/0103196 (2007-05-01), Agan et al.

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