Magnetic memory

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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Details

C365S149000, C365S150000, C365S158000, C365S189070, C365S189090, C365S207000

Reexamination Certificate

active

07042783

ABSTRACT:
One embodiment of a magnetic memory includes a memory cell configured to provide a first state, and a sensing circuit. The sensing circuit is configured to charge a capacitor through the memory cell in the first state and discharge the capacitor through the memory cell in the first state to determine a state of the memory cell.

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