Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-08-23
2005-08-23
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S157000, C365S158000
Reexamination Certificate
active
06934184
ABSTRACT:
A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.
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Amano Minoru
Asao Yoshiaki
Iwata Yoshihisa
Kishi Tatsuya
Nishiyama Katsuya
Elms Richard
Kabushiki Kaisha Toshiba
Nguyen Hien
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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