Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-31
2005-05-31
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06900491
ABSTRACT:
Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises an insulator having a trench, a first conductor in the trench, a first magnetic layer in the trench and adjacent to the first conductor, and a second magnetic layer outside the trench.
REFERENCES:
patent: 5039655 (1991-08-01), Pisharody
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6169686 (2001-01-01), Brug et al.
patent: 6261893 (2001-07-01), Chang et al.
patent: 6417561 (2002-07-01), Tuttle
patent: 6548849 (2003-04-01), Pan et al.
patent: 6551852 (2003-04-01), Tuttle
patent: 6555858 (2003-04-01), Jones et al.
patent: 6716644 (2004-04-01), Nejad et al.
patent: 2004/0087163 (2004-05-01), Steimle et al.
Nelms David
Nguyen Thinh T
LandOfFree
Magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3386612