Magnetic memory

Details Magnetic memory Magnetic memory

2008-04-29

2008-04-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C257S421000

Reexamination Certificate

active

07366010

ABSTRACT:
A TMR element has a free first magnetic layer, a second magnetic layer with a magnetization direction B fixed, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided above a surface of the first magnetic layer and having a fixed magnetization direction, and a first nonmagnetic conductive layer provided between the first magnetic layer and the third magnetic layer, and an area of a cross section of the first magnetic layer perpendicular to a stack direction is not less than 0.001 μm2, and less than 0.02 μm2.

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