Magnetic memory

Details Magnetic memory Magnetic memory

2011-03-08

2011-03-08

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07903453

ABSTRACT:
A magnetic memory is less susceptible to external magnetic fields and, thus, to writing errors and other adverse effects caused by external magnetic fields. In the magnetic memory, a magnetoresistive element is arranged adjacent to a part of a conductor line. A shield structure is also arranged to shield the magnetoresistive element against external magnetic fields generated by factors other then the part of the line.

REFERENCES:
patent: 2004/0021189 (2004-02-01), Yoda et al.
patent: 2006/0098478 (2006-05-01), Ezaki et al.
patent: 11-274599 (1999-10-01), None
patent: 2000-090658 (2000-03-01), None
patent: 2004-128430 (2004-02-01), None

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