Magnetic memories with bit lines and digit lines that...

Details Magnetic memories with bit lines and digit lines that... Magnetic memories with bit lines and digit lines that...

2006-06-06

2006-06-06

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S003000, C257S009000, C257S053000, C257S414000, C257S421000, C365S210130

Reexamination Certificate

active

07057222

ABSTRACT:
A magnetic memory includes digit lines, bit lines, and magnetic tunnel junctions (MTJs) that are between the bits lines and the digit lines. The digit lines intersect the bit lines at an oblique angle. The digit lines may intersect the bit lines at an oblique angle of from 15° to 75°.

REFERENCES:
patent: 6518588 (2003-02-01), Parkin et al.
patent: 6697294 (2004-02-01), Qi et al.
patent: 6891193 (2005-05-01), Schwarz
patent: 10-1999-0072262 (1999-09-01), None
patent: WO 02-07166 (2002-01-01), None
patent: WO 0207166 (2002-01-01), None
Notice to File Response, Korean Application No. 10-2002-0067349, Oct. 27, 2004.
Notice to File a Response/Amendent to the Examination Report for Korean application No. 2002-67349 mailed on Apr. 27, 2005.

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