Magnetic head having a magnetoresistive element and highly...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C360S324100, C365S158000, C257S002000

Reexamination Certificate

active

07378699

ABSTRACT:
A magnetic head is provided with a giant magnetoresistive element, barrier layer, and highly polarized spin injection layer. The barrier layer is inserted between the giant magnetoresistive element and the injection layer. By applying a sensing current to both the magnetoresistive element and the injection layer, an output of the magnetic head can be multiplied significantly. The output of the head is increased by increasing a resistance change rate of a magnetoresistive element used as a reading element. The increasing of the resistance change rate is due to that a band of s electrons in the Cu film grown in the highly polarized spin injection layer is placed in a highly polarized state near the Fermi level and the upward spin current only flows into the giant magnetoresistive element, which has multiplied the output.

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patent: 6438026 (2002-08-01), Gillies et al.
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patent: 10-4227 (1997-03-01), None
patent: 2001-202604 (2000-01-01), None
patent: 2001-237471 (2000-03-01), None
Y. Ji et al. (Physical Review Letters, vol. 86, No. 24, Jun. 2001, p. 5585-5589.

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