Magnetic head having a magnetoresistive element and highly...

Details Magnetic head having a magnetoresistive element and highly... Magnetic head having a magnetoresistive element and highly...

2008-05-27

2008-05-27

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C360S324100, C365S158000, C257S002000

Reexamination Certificate

active

07378699

ABSTRACT:
A magnetic head is provided with a giant magnetoresistive element, barrier layer, and highly polarized spin injection layer. The barrier layer is inserted between the giant magnetoresistive element and the injection layer. By applying a sensing current to both the magnetoresistive element and the injection layer, an output of the magnetic head can be multiplied significantly. The output of the head is increased by increasing a resistance change rate of a magnetoresistive element used as a reading element. The increasing of the resistance change rate is due to that a band of s electrons in the Cu film grown in the highly polarized spin injection layer is placed in a highly polarized state near the Fermi level and the upward spin current only flows into the giant magnetoresistive element, which has multiplied the output.

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Y. Ji et al. (Physical Review Letters, vol. 86, No. 24, Jun. 2001, p. 5585-5589.

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