Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-06-14
2011-06-14
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S185180
Reexamination Certificate
active
07961503
ABSTRACT:
An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.
REFERENCES:
patent: 5959896 (1999-09-01), Forbes
patent: 6480412 (2002-11-01), Bessho
patent: 2005/0017165 (2005-01-01), Franzen
patent: 2007/0155099 (2007-07-01), Takata
patent: 2007/0279977 (2007-12-01), Banerjee
patent: 2008/0265243 (2008-10-01), Ahn
patent: 2009/0129167 (2009-05-01), Banerjee et al.
patent: 2010/0038735 (2010-02-01), Li et al.
Cheng Kuan et al., New Magnetic Flash Memory with FePt Magnetic Floating Gate, Japanese Journal of Applied Physics, vol. 45, No. 4B, 2006, pp. 3217-3221.
Jin Insik
Li Yang
Liu Hongyue
Xue Song S.
Campbell Nelson Whipps LLC
Ho Hoai V
Seagate Technology LLC
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