Coating apparatus – Gas or vapor deposition – With treating means
Patent
1994-06-13
1996-08-13
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723FE, 118723FI, 118723MR, 25049221, C23C 1600
Patent
active
055452574
ABSTRACT:
Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a "cold plasma" which is diffused in the region of the process surface while the ion implantation process takes place.
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Tanaka, Shigeru et al.; "Effects of Internal and External Magnetic Fields on the Characteristics of a Magnetic Multipole Plasma Source", Rev. Sci. Instrum., 57 (2), Feb. 1986, American Institute of Physics, 1986, pp. 145-150.
Breneman R. Bruce
Chang Joni Y.
Electro-Graph, Inc.
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