Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-09-18
2007-09-18
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C257S427000
Reexamination Certificate
active
11193625
ABSTRACT:
Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
REFERENCES:
patent: 7126797 (2006-10-01), Hasegawa et al.
patent: 2003/0011463 (2003-01-01), Iwasaki et al.
patent: 2003/0151944 (2003-08-01), Saito
patent: 2004/0114289 (2004-06-01), Eiselt et al.
Tehrani, Saied, et al., Magnetoresistive Random Access Memory.
Using Magnetic Tunnel Junctions, Proceedings of the IEEE, vol. 91.
No. 5, pp. 703-714, (May 2003).
Gambino Richard J.
Hwang In-jun
Kim Tae-wan
Kim Young-keun
Kwon Soon-ju
Dinh Son
Lee & Morse P.C.
LandOfFree
Magnetic film structure using spin charge, a method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic film structure using spin charge, a method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic film structure using spin charge, a method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3740930