Magnetic film, multilayer magnetic film, method and...

Details Magnetic film, multilayer magnetic film, method and... Magnetic film, multilayer magnetic film, method and...

2007-05-22

2007-05-22

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

10929465

ABSTRACT:
A magnetic random access memory capable of writing information with a small write current is provided. A magnetic film or a multilayer magnetic film of the present invention has a part where the magnetization inversion is relatively easier than in the other parts. A magnetization inversion mechanism of the magnetic film of the invention has an application protrusion for applying a stronger magnetic field to a part of the magnetic film than to the other parts thereof. The magnetic random access memory of the invention includes a magnetoresistive film having the multilayer magnetic film as a memory element or the magnetization inversion mechanism as a writing unit.

REFERENCES:
patent: 5574279 (1996-11-01), Ikeda
patent: 5923637 (1999-07-01), Shimada
patent: 6219275 (2001-04-01), Nishimura
patent: 6381171 (2002-04-01), Inomata et al.
patent: 2004/0052006 (2004-03-01), Odagawa et al.
patent: 11-213650 (1999-08-01), None

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