Magnetic film forming method

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419211, 20419215, 20419222, 20419212, 428692, 428694T, 427569, 427576, 427571, 427580, 427599, H01F 1000

Patent

active

06036825&

ABSTRACT:
In a magnetic film forming method, a plurality of chips formed of Fe.sub.3 O.sub.4 and a plurality of chips formed of HfO.sub.2 are disposed on a target formed of Fe. The composition ratio of a Fe--Hf--O film can be set within a proper range by adjusting the numbers of the up said two kind of chips.

REFERENCES:
patent: 4865658 (1989-09-01), Kudo
patent: 5302469 (1994-04-01), Sugenoya et al.
patent: 5573863 (1996-11-01), Hayakawa et al.
patent: 5750273 (1998-05-01), Inoue et al.
patent: 5837392 (1998-11-01), Katori et al.
Ahn et al, IBM Technical Disclosure Bulletin S1508, vol. 13, No. 10, Mar. 1971.

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